RD100HHF1C

$44.00

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

Category: RF transistors

Description

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. High power and High Gain:
Pout>100W, Gp>11.5dB @VDD=12.5V, F=30MHz High Efficiency: 60%typ. on HF Band

Additional information

Weight	0.03 kg

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